Physics-based Modeling and Simulation of Dual Material Gate(DMG) LDMOS

Author

Dai, Yuehua ; Hu, Yuan ; Liu, Qi ; Ke, Daoming ; Chen, Junning

Author_Institution

Sch. of Electron. Sci. & Technol., Anhui Univ., Hefei

fYear

2006

fDate

4-7 Dec. 2006

Firstpage

1500

Lastpage

1503

Abstract

In this paper, an analytical modeling of a new structure called dual material gate (DMG) lateral double diffused metal oxide semiconductor (LDMOS) is presented, which combines the advantages of LDMOS and DMG MOSFET. The expressions for the surface potential and electric field under the two poly-silicon gates are derived. Then, a modeling strategy for channel current is presented for the DMG-LDMOS. Channel current model includes the velocity overshoot effect, and avoids calculating the nonlinear drift resistance which is prohibitively difficult to value for LDMOS. The model results are verified by comparing them to simulated results obtained from the device simulator MEDICI

Keywords

MOSFET; semiconductor device models; channel current; dual material gate LDMOS; enhanced diffusion drift equation; field effect transistor; lateral double diffused metal oxide semiconductor; surface potential; velocity overshoot effect; Analytical models; Boundary conditions; Electric potential; FETs; Inorganic materials; MOSFET circuits; Medical simulation; Poisson equations; Semiconductor materials; Surface resistance; Dual Material Gate Field Effect Transistor (DMGFET); Enhanced Diffusion Drift Equation; Lateral Double Diffused Metal Oxide Semiconductor (LDMOS); Quasi-Saturation;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on

Conference_Location

Singapore

Print_ISBN

1-4244-0387-1

Type

conf

DOI

10.1109/APCCAS.2006.342507

Filename

4145688