Title :
Influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses
Author :
Camp, Michael ; Garbe, Heyno ; Nitsch, Daniel
Author_Institution :
Inst. of Electr. Eng. & Meas. Sci., Hannover Univ., Germany
Abstract :
In this paper the influence of TTL- and CMOS-technology on the destruction effects of semiconductors by impact of EMP and UWB pulses is determined. Different logic devices like NANDs and inverters were exposed to high amplitude transient pulses.
Keywords :
CMOS integrated circuits; NAND circuits; electromagnetic compatibility; electromagnetic pulse; logic gates; transistor-transistor logic; CMOS-technology; EMC; EMP; NANDs; TTL-technology; UWB pulses; high amplitude transient pulses; inverters; logic devices; semiconductor device destruction; CMOS technology; EMP radiation effects; Electric breakdown; Electric variables measurement; Electromagnetic fields; Electromagnetic measurements; Electromagnetic transients; Electromagnetic waveguides; Modems; Pulse measurements;
Conference_Titel :
Electromagnetic Compatibility, 2002. EMC 2002. IEEE International Symposium on
Conference_Location :
Minneapolis, MN, USA
Print_ISBN :
0-7803-7264-6
DOI :
10.1109/ISEMC.2002.1032453
