A comparative study on the performance of IGBTs in high frequency ZCQR converter

Author

Omar, A.M. ; Kadir, N.M.A.

Author_Institution

Mara Inst. of Technol., Malaysia

fYear

1994

fDate

26-28 Oct 1994

Firstpage

679

Lastpage

683

Abstract

Zero current quasi resonant power converter (ZCQRC) is one of the techniques used in switched-mode power supply design. It was developed to minimise the switching losses in the power switching devices. This work describes the performances, capability and limitation of insulated gate bipolar transistor (IGBT) devices used in the converter. The IGBT models for PSPICE simulation software were first developed and the models are used throughout this work. The developed models are compared with the existing models obtained from the SABER simulation package and manufacturer data sheets. PSPICE is use in this work in order to asses the comparison

Keywords

circuit analysis computing; digital simulation; insulated gate bipolar transistors; power bipolar transistors; power engineering computing; power semiconductor switches; resonant power convertors; semiconductor device models; software packages; switched mode power supplies; switching circuits; IGBT; PSPICE; ZVS; design; insulated gate bipolar transistor; models; performance; power switching devices; simulation software; switched-mode power supply; switching losses; zero current quasi resonant power converter;

fLanguage

English

Publisher

iet

Conference_Titel

Power Electronics and Variable-Speed Drives, 1994. Fifth International Conference on

Conference_Location

London

Type

conf

DOI

10.1049/cp:19941046

Filename

341628