Theoretical and Experimental Analysis of Temperature-Insensitive 655-nm Resonant-Cavity LEDs

Author

Chen, Jun-Rong ; Chang, Yi-An ; Hao-Chung Kuo ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung

Author_Institution

Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu

fYear

2007

fDate

26-31 Aug. 2007

Firstpage

1

Lastpage

2

Abstract

Visible InGaP/InGaAlP resonant-cavity light-emitting diodes with low temperature sensitivity output characteristics were demonstrated. By means of extending the resonant cavity to a thickness of three wavelength (3 lambda), the degree of power variation between 25 and 95degC for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1-lambda cavity) to -0.6 dB. Numerical simulation showed that the insensitive temperature dependence of output characteristics was attributed to the reduced electron leakage current.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical resonators; LED; electron leakage current; power variation; resonant cavity; wavelength 655 nm; Electrons; Fabrication; Leakage current; Light emitting diodes; Numerical simulation; Optical fibers; Poisson equations; Resonance; Temperature dependence; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on

Conference_Location

Seoul

Print_ISBN

978-1-4244-1173-3

Electronic_ISBN

978-1-4244-1174-0

Type

conf

DOI

10.1109/CLEOPR.2007.4391580

Filename

4391580