• DocumentCode
    2248348
  • Title

    Degradation Modes of InGaN Blue-Violet Laser Diodes Grown on Bulk GaN Wafers

  • Author

    Kim, Chong Cook ; Choi, Yoonho ; Noh, Min-Soo

  • Author_Institution
    LD Group, LG Electron. Inst. of Technol., Seoul
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigated the degradation modes in the aging processes of (Al, In)GaN laser diodes on bulk GaN substrates of the dislocation density less than 5times106 cm-2. The estimated lifetime exceeds 2,000 h under 160 mW pulse-operation at 60degC. The lifetime-limiting degradation is attributed to nonradiative recombination related with the defects extended from GaN substrates.
  • Keywords
    III-V semiconductors; ageing; aluminium compounds; dislocation density; indium compounds; semiconductor growth; semiconductor lasers; AlGaN; AlGaN laser diodes; GaN; GaN wafers; InGaN; InGaN blue-violet laser diodes; InGaN laser diodes; aging processes; degradation modes; dislocation density; lifetime-limiting degradation; nonradiative recombination; power 160 mW; temperature 60 C; Aging; Coatings; Diode lasers; Gallium nitride; Mirrors; Space vector pulse width modulation; Substrates; Testing; Thermal degradation; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391581
  • Filename
    4391581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2248348