Title :
Degradation Modes of InGaN Blue-Violet Laser Diodes Grown on Bulk GaN Wafers
Author :
Kim, Chong Cook ; Choi, Yoonho ; Noh, Min-Soo
Author_Institution :
LD Group, LG Electron. Inst. of Technol., Seoul
Abstract :
We investigated the degradation modes in the aging processes of (Al, In)GaN laser diodes on bulk GaN substrates of the dislocation density less than 5times106 cm-2. The estimated lifetime exceeds 2,000 h under 160 mW pulse-operation at 60degC. The lifetime-limiting degradation is attributed to nonradiative recombination related with the defects extended from GaN substrates.
Keywords :
III-V semiconductors; ageing; aluminium compounds; dislocation density; indium compounds; semiconductor growth; semiconductor lasers; AlGaN; AlGaN laser diodes; GaN; GaN wafers; InGaN; InGaN blue-violet laser diodes; InGaN laser diodes; aging processes; degradation modes; dislocation density; lifetime-limiting degradation; nonradiative recombination; power 160 mW; temperature 60 C; Aging; Coatings; Diode lasers; Gallium nitride; Mirrors; Space vector pulse width modulation; Substrates; Testing; Thermal degradation; Threshold current;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391581
