Optically and Electrically Pumped GaN-based VCSELs

Author

Lu, T.C. ; Kao, C.C. ; Huang, G.S. ; Kuo, H.C. ; Wang, S.C.

Author_Institution

Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu

fYear

2007

fDate

26-31 Aug. 2007

Firstpage

1

Lastpage

2

Abstract

We report the recent progress of GaN-based VCSELs with a hybrid cavity structure comprised an epitaxial AlN/GaN DBR with superlattice insertion layers, an InGaN/GaN MQW active region and a top dielectric DBR. The lasers achieved laser action under optical pumping at the room temperature with a narrow linewidth. The preliminary results of the electrically pumped VCSEL will also be presented.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; optical pumping; quantum well lasers; surface emitting lasers; wide band gap semiconductors; AlN-GaN; InGaN-GaN; MQW active region; dielectric Bragg reflector; electrically pumped VCSEL; hybrid cavity structure; optical pumping; optically pumped VCSEL; superlattice insertion layer; temperature 293 K to 298 K; Dielectrics; Distributed Bragg reflectors; Gallium nitride; Laser excitation; Optical pumping; Optical superlattices; Pump lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on

Conference_Location

Seoul

Print_ISBN

978-1-4244-1173-3

Electronic_ISBN

978-1-4244-1174-0

Type

conf

DOI

10.1109/CLEOPR.2007.4391583

Filename

4391583