DocumentCode :
2248445
Title :
ZnSe-based microcavity fabricated using epitaxial liftoff
Author :
Curran, A. ; Morrod, J.K. ; Prior, K.A. ; Kar, A.K. ; Warburton, R.J.
Author_Institution :
Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh
fYear :
2007
fDate :
26-31 Aug. 2007
Firstpage :
1
Lastpage :
2
Abstract :
We present key features of the strong coupling regime in a ZnSe-based microcavity; anticrossing with a normal mode splitting of 23.6 meV at 20 K; narrowing of the lower polariton linewidth near resonance; and composite evolution of the cavity-polaritons. The heavy-hole exciton oscillator strength, fosc= 1.78 times 1013 cm-2 is also deduced.
Keywords :
II-VI semiconductors; excitons; microcavities; polaritons; semiconductor epitaxial layers; spectral line narrowing; zinc compounds; ZnSe; cavity-polaritons; electron volt energy 23.6 meV; epitaxial liftoff; heavy-hole exciton oscillator strength; microcavity fabrication; normal mode splitting; polariton linewidth; strong coupling regime; temperature 20 K; Dielectric substrates; Etching; Excitons; Microcavities; Mirrors; Optical coupling; Optical device fabrication; Oscillators; Resonance; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
Type :
conf
DOI :
10.1109/CLEOPR.2007.4391585
Filename :
4391585
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2248445
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