"Actinic-only" defects in EUVL mask blanks-native defects, barely detectable by visible-light inspection

Author

Moonsuk Yi ; Haga, T. ; Walton, C. ; Bokor, J.

Author_Institution

Center for X-Ray Opt., Lawrence Berkeley Lab., CA, USA

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

88

Lastpage

89

Abstract

An actinic (at-wavelength) inspection technology is essential for learning the nature of defects at the developmental stage of the technology and for eventually qualifying less costly non-EUV inspection methods. In this paper, we discuss recent results of actinic defect counting experiments covering several cm/sup 2/ area. Results include some small actinic-only defects, not detected by optical inspection tools, and a new class of relatively large, absorbing defects.

Keywords

flaw detection; inspection; light scattering; masks; ultraviolet lithography; 65 nm; EUVL mask blanks; actinic EUVL mask defect inspection system; actinic defect counting experiments; bright field images; dark field images; extreme ultraviolet lithography; focused EUV beam scanning; nonspecular scattering; relatively large absorbing defects; small actinic-only defects; specular reflection; Inspection; Laboratories; Light scattering; Optical reflection; Optical scattering; Optical sensors; Ultraviolet sources; X-ray detection; X-ray detectors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984102

Filename

984102