A new generation of intelligent power devices for motor drive applications

Author

Majumdar, G. ; Medaule, D.

Author_Institution

Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

1994

fDate

26-28 Oct 1994

Firstpage

35

Lastpage

41

Abstract

A new low loss, high speed series of intelligent IGBT power modules has been developed. Power device performance has been enhanced through the use of third generation IGBT chip technology with optimised gate drive and control circuits. Short circuit protection using current sense IGBTs with “real time” current limiting allows power devices to be optimised for lowest operational losses. Further reduction of losses is achieved through the use of a new ultrafast, soft recovery, free wheel diode chip. New compact isolated base packages containing six or seven power devices with current ratings up to 200 A at 600 V and 100 A at 1200 V are designed for cost effective, high performance motor control applications. This paper explains the internal design philosophy and architecture of these new devices

Keywords

driver circuits; insulated gate bipolar transistors; integrated circuit packaging; motor drives; overcurrent protection; power bipolar transistors; power integrated circuits; semiconductor device packaging; short-circuit currents; 100 A; 1200 V; 200 A; 600 V; IGBT; applications; architecture; control circuits; cost effective; current limiting; gate drive circuits; intelligent power devices; internal design; isolated base packages; losses; motor drive; performance; short circuit protection; third generation technology; ultrafast soft recovery free wheel diode;

fLanguage

English

Publisher

iet

Conference_Titel

Power Electronics and Variable-Speed Drives, 1994. Fifth International Conference on

Conference_Location

London

Type

conf

DOI

10.1049/cp:19940936

Filename

341669