DocumentCode :
2249202
Title :
AlGaN-based ultraviolet lasers — Applications and materials challenges
Author :
Kneissl, Michael ; Kolbe, Tim ; Schlegel, Jessica ; Stellmach, Joachim ; Chua, Chris ; Yang, Zhihong ; Knauer, Arne ; Küller, V. ; Weyers, Markus ; Johnson, Noble M.
Author_Institution :
Inst. of Solid State Phys., Tech. Univ. Berlin, Berlin, Germany
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
Recent progress in the development of ultraviolet laser diodes will be reviewed. The effect of the heterostructure design on the gain characteristics as well as epitaxial growth challenges for AlGaN-based UV lasers will be discussed.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium compounds; quantum well lasers; reviews; semiconductor growth; AlGaN-GaN; epitaxial growth; gain characteristics; heterostructure design; review; ultraviolet laser diodes; Aluminum gallium nitride; Diode lasers; Laser excitation; Pump lasers; Quantum well lasers; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950984
Link To Document :
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