A fully integrated high efficiency SiGe HBT class F power amplifier at 2.2 GHz

Author

Sullivan, J. A O ; Delabie, C. ; McCarthy, K.G. ; Murphy, A. ; Murphy, P.J.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Ireland

fYear

2003

fDate

8-9 Sept. 2003

Firstpage

48

Lastpage

51

Abstract

This paper presents a fully integrated high efficiency SiGe HBT class F power amplifier (PA). A maximum on-chip power added efficiency (PAE) of 25 % has been measured, which at 2.2 GHz and a supply voltage of 1.3 V, is to the forefront of fully integrated HBT class F power amplifier design. The PA is suitable for applications that include DECT and GSM which employ the constant envelope modulation scheme, GMSK. The power amplifier was fabricated using an advanced 0.18 um BiCMOS process [J. Kirchgessner et al., September 2001].

Keywords

Q-factor; heterojunction bipolar transistors; integrated circuit design; mobile communication; power amplifiers; 1.3 V; 2.2 GHz; DECT; GSM; HBT class F power amplifier; SiGe; digitally enhanced cordless telecommunications; envelope modulation scheme; global system for mobile communications; heterojunction bipolar transistors; monolithic switching amplifiers; on-chip power added efficiency; quality factor; BiCMOS integrated circuits; Consumer electronics; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Radiofrequency amplifiers; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Frequency Postgraduate Student Colloquium, 2003

Print_ISBN

0-7803-8123-8

Type

conf

DOI

10.1109/HFPSC.2003.1242304

Filename

1242304