Material properties in Si-Ge/Ge quantum wells for silicon-integrated electro-absorption devices

Author

Schaevitz, Rebecca K. ; Roth, Jonathan E. ; Ren, Shen ; Fidaner, Onur ; Miller, David A B

Author_Institution

Edward L. Ginzton Lab., Stanford Univ., Stanford, CA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

The quantum-confined Stark effect demonstrated in Si-Ge/Ge quantum wells promises integration of optics with silicon ICs. Using photocurrent, tunneling resonance and nonparabolicity, we propose more accurate values of key parameters for device design.

Keywords

Ge-Si alloys; electro-optical devices; electro-optical effects; electroabsorption; elemental semiconductors; germanium; optical materials; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; Si-Ge/Ge quantum wells; photocurrent; quantum-confined Stark effect; silicon-integrated electro-absorption devices; tunneling resonance; Germanium; High speed optical techniques; III-V semiconductor materials; Material properties; Optical interconnections; Optical materials; Photoconductivity; Photonic band gap; Silicon; Stark effect; (160.2100) Electro-optical materials; (160.6000) Semiconductor Materials; (200.4650) Optical Interconnects; (250.0250) Optoelectronics; (270.0270) Quantum Optics;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572009