• DocumentCode
    2249285
  • Title

    Near-UV LEDs on sapphire using single crystal AlN-buffer

  • Author

    Ohba, Y.

  • Author_Institution
    Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    UV-LEDs were fabricated on GaN formed on sapphire using high-temperature-grown AlN buffer. For flip-chip devices, peak wavelength, output power, operation voltage and external quantum efficiency at 20 mA were 383 nm, 23 mW, 3.5 V and 36%, respectively. The internal quantum efficiency was estimated to be as high as 72%. These values were comparable to those for visible LEDs.
  • Keywords
    III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; AlN; GaN; flip-chip devices; high-temperature-grown AlN buffer; internal quantum efficiency; near-UV LED; sapphire; single crystal AlN-buffer; Absorption; Crystals; Gallium nitride; Light emitting diodes; Optical surface waves; Power generation; Quantum well devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950987
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2249285