Title :
Easy removal of mold for imprint lithography by ion beam modification of photoresist surface
Author :
Baba, A. ; Iwamoto, M. ; Tsubaki, K. ; Asano, T.
Author_Institution :
Center for Microelectron. Syst., Kyushu Inst. of Technol., Iizuka, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.
Keywords :
ion beam applications; lithography; moulding; nanotechnology; photoresists; Si; Si wafer; imprint depth; ion beam modification; mold removal; nanoimprint lithography; novolac photoresist; photoresist surface; step-and-repeat pattern transfer; Argon; Costs; Fabrication; Ion beams; Lithography; Microelectronics; Resists; Scanning electron microscopy; Temperature; Throughput;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984106
