Efficient phase and intensity modulation in substrate removed GaAs/AlGaAs nanowires

Author

Shin, JaeHyuk ; Chang, Yu-Chia ; Dagli, Nadir

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California at Santa Barbara, Santa Barbara, CA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Substrate- removed GaAs/AlGaAs nanowire phase modulators with 0.51 V pi phase shift efficiency were fabricated. Quasi push-pull driven Mach-Zehnder intensity modulators made out of these phase modulators have record low 0.3 V drive voltage for 7 mm long electrode.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electrodes; gallium arsenide; integrated optics; intensity modulation; nanowires; phase modulation; semiconductor quantum wires; GaAs-AlGaAs; Mach-Zehnder modulators; electrode; intensity modulation; nanowire phase modulators; phase modulation; phase modulators; quasipush-pull driven modulators; size 7 mm; substrate removed nanowires; voltage 0.3 V; Gallium arsenide; Intensity modulation; Low voltage; Nanowires; Optical interferometry; Optical modulation; Optical ring resonators; Optical waveguides; Phase modulation; Substrates; (250.0250) Optoelectronics; (250.5300) Photonic integrated circuits;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572010