• DocumentCode
    2249434
  • Title

    High power III-Nitride UV emitters

  • Author

    Shatalov, M. ; Yang, J. ; Bilenko, Yu ; Shur, M. ; Gaska, R.

  • Author_Institution
    Sensor Electron. Technol., Inc., Columbia, SC, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Increasing power and efficiency of UV semiconductor light sources enables great expansion of system applications. We review state-of-the-art III-Nitride LEDs and report on improved device designs and fabrication for achieving high power operation.
  • Keywords
    III-VI semiconductors; light emitting diodes; light sources; ultraviolet spectra; III-nitride UV emitters; UV semiconductor light sources; high power UV emitters; state-of-the-art III-nitride LED; Aluminum gallium nitride; Current measurement; Fabrication; Junctions; Light emitting diodes; Power generation; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950993