Title :
IQE and EQE of the nitride-based UV/DUV LEDs
Author :
Amano, H. ; Park, G.J. ; Tanikawa, T. ; Honda, Y. ; Yamaguchi, M. ; Ban, K. ; Nagata, K. ; Nonaka, K. ; Takeda, K. ; Iwaya, M. ; Takeuchi, T. ; Kamiyama, S. ; Akasaki, I.
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.
Keywords :
electroluminescence; light emitting diodes; photoluminescence; quantum optics; EQE; IQE; dislocation density; electroluminescence; injection efficiency; nitride based UV/DUV LED; nonradiative component; photoluminescence; quantum efficiency; Aluminum gallium nitride; Annealing; Charge carrier density; Current measurement; Light emitting diodes; Nitrogen; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
