DocumentCode
2249459
Title
IQE and EQE of the nitride-based UV/DUV LEDs
Author
Amano, H. ; Park, G.J. ; Tanikawa, T. ; Honda, Y. ; Yamaguchi, M. ; Ban, K. ; Nagata, K. ; Nonaka, K. ; Takeda, K. ; Iwaya, M. ; Takeuchi, T. ; Kamiyama, S. ; Akasaki, I.
Author_Institution
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.
Keywords
electroluminescence; light emitting diodes; photoluminescence; quantum optics; EQE; IQE; dislocation density; electroluminescence; injection efficiency; nitride based UV/DUV LED; nonradiative component; photoluminescence; quantum efficiency; Aluminum gallium nitride; Annealing; Charge carrier density; Current measurement; Light emitting diodes; Nitrogen; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950994
Link To Document