DocumentCode
2249478
Title
Growth and characterization of deep ultraviolet emitting AlGaN structures on SiC substrates
Author
Zhang, Wei ; Nikiforov, A.Yu. ; Thomidis, Christos ; Moldawer, Adam ; Sun, Haiding ; Hug, William F. ; Moustakas, Theodore
Author_Institution
Photonics Center, Boston Univ., Boston, MA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We report MBE growth of AlGaN structures emitting below 250 nm on SiC substrates. We found that the IQE of the MQWs and DHs is as high as 68% and 43% respectively.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; semiconductor quantum wells; silicon compounds; wide band gap semiconductors; AlGaN; MBE growth; MQW; SiC; deep ultraviolet emitting structures; multiquantum well; Aluminum gallium nitride; Quantum well devices; Silicon carbide; Substrates; Surface morphology; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950995
Link To Document