Title :
High TE-polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers
Author :
Zhang, Jing ; Zhao, Hongping ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The use of ultra-thin GaN delta-layer in high Al-content AlGaN quantum wells leads to the strong valence subbands rearrangement, which in turn results in high TE-polarized optical gain at emission wavelength ~250-300 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light polarisation; semiconductor lasers; semiconductor quantum wells; wide band gap semiconductors; AlGaN-GaN; AlGaN-delta-GaN quantum well; deep UV lasers; high TE-polarized optical gain; ultra-thin GaN delta-layer; valence subbands rearrangement; Biomedical optical imaging; Charge carrier density; Gallium nitride; Media; Optical mixing; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
