DocumentCode :
2249511
Title :
New generation of distributed Bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications
Author :
Abid, M. ; Moudakir, T. ; Gautier, S. ; Orsal, G. ; Naciri, A. En ; Djebbour, Z. ; Ryou, J.-H. ; Patriarche, G. ; Kim, H.J. ; Lochner, Z. ; Pantzas, K. ; Alamarguy, D. ; Jomard, F. ; Dupuis, R.D. ; Ougazzaden, A.
Author_Institution :
GT-Lorraine, Georgia Inst. of Technol., Metz, France
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We report innovative highly reflective DBR structures based on the novel material BAIN. An experimental BAIN/AIN DBRs demonstrated a reflectivity of 60% and 82% at wavelengths of 282 nm and 311nm respectively.
Keywords :
III-V semiconductors; aluminium compounds; boron compounds; distributed Bragg reflectors; optical materials; optical multilayers; optoelectronic devices; wide band gap semiconductors; BAlN-AlN; deep UV optoelectronic applications; distributed Bragg reflector; highly reflective DBR structure; wavelength 282 nm; wavelength 311 nm; Aluminum gallium nitride; Boron; Distributed Bragg reflectors; Materials; Reflectivity; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950997
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2249511
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