DocumentCode
2249573
Title
New high power diode model with both forward and reverse recovery
Author
Batard, C. ; Smith, D.M. ; Zelaya, H. ; Goodman, C.J.
Author_Institution
Birmingham Univ., UK
fYear
1994
fDate
26-28 Oct 1994
Firstpage
447
Lastpage
452
Abstract
Over the last few years, many papers have been published in the area of diode modelling. However, satisfactory representation of both forward and reverse recovery phenomena for high power diodes has yet to be published. This paper presents the development of a new high power diode model, based on the combination of two different strategies that produce forward recovery voltage and reverse recovery current separately. The model is verified by comparing the SABER simulation results against those produced by an experimental rig for a high power diode at turn-on and turn-off
Keywords
digital simulation; electronic engineering computing; power engineering computing; power semiconductor diodes; semiconductor device models; software packages; SABER; computer simulation; development; forward recovery voltage; modelling; power diode model; reverse recovery current; semiconductor; turn-off; turn-on;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable-Speed Drives, 1994. Fifth International Conference on
Conference_Location
London
Type
conf
DOI
10.1049/cp:19941007
Filename
341686
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