Title :
Thermal distortion model of mask for extreme ultraviolet lithography during periodic scanning exposure
Author :
Chiba, A. ; Ota, K. ; Ogawa, T. ; Okazaki, S.
Author_Institution :
ASET EUVL Lab., Kanagawa, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
In order to estimate the accuracy of patterns fabricated by EUV lithography (EUVL), it is necessary to clarify the thermal distortion of an EUVL mask caused by the energy absorbed during exposure. A dynamic thermal distortion model that combines 3-dimensional heat transfer and in-plane stress models has been developed, and was used to investigate the basic worst-case thermal-distortion characteristics of an EUVL mask during periodic scanning exposure and their effect on mask accuracy.
Keywords :
finite difference methods; heat conduction; masks; semiconductor process modelling; thermal stresses; ultraviolet lithography; 3-D heat transfer; EUV lithography; dynamic thermal distortion model; finite difference method; in-plane stress models; mask thermal distortion; perfect implicit method; periodic scanning exposure; worst-case thermal-distortion characteristics; Heat transfer; Lithography; Mirrors; Optical reflection; Reflectivity; Resists; Steady-state; Thermal resistance; Thermal stresses; Ultraviolet sources;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984120
