Thermal distortion model of mask for extreme ultraviolet lithography during periodic scanning exposure

Author

Chiba, A. ; Ota, K. ; Ogawa, T. ; Okazaki, S.

Author_Institution

ASET EUVL Lab., Kanagawa, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

124

Lastpage

125

Abstract

In order to estimate the accuracy of patterns fabricated by EUV lithography (EUVL), it is necessary to clarify the thermal distortion of an EUVL mask caused by the energy absorbed during exposure. A dynamic thermal distortion model that combines 3-dimensional heat transfer and in-plane stress models has been developed, and was used to investigate the basic worst-case thermal-distortion characteristics of an EUVL mask during periodic scanning exposure and their effect on mask accuracy.

Keywords

finite difference methods; heat conduction; masks; semiconductor process modelling; thermal stresses; ultraviolet lithography; 3-D heat transfer; EUV lithography; dynamic thermal distortion model; finite difference method; in-plane stress models; mask thermal distortion; perfect implicit method; periodic scanning exposure; worst-case thermal-distortion characteristics; Heat transfer; Lithography; Mirrors; Optical reflection; Reflectivity; Resists; Steady-state; Thermal resistance; Thermal stresses; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984120

Filename

984120