Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography

Author

Chen, H.L. ; Ko, F.H. ; Chu, T.C. ; Cheng, H.C. ; Huang, T.Y.

Author_Institution

Nat. Nano Device Lab., Hsinchu, Taiwan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

132

Lastpage

133

Abstract

For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.

Keywords

antireflection coatings; dielectric thin films; optical constants; reflectivity; ultraviolet lithography; ultraviolet spectra; 193 nm; 248 nm; ArF lithography; BARC layer; KrF lithography; bottom antireflective coating materials; etching hard mask layer; low dielectric constant SILK films; optical constants; reflectance; ultraviolet spectral region; Coatings; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric substrates; Etching; Lithography; Optical films; Reflectivity; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984124

Filename

984124