Title :
Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography
Author :
Chen, H.L. ; Ko, F.H. ; Chu, T.C. ; Cheng, H.C. ; Huang, T.Y.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
For advanced lithography processes, a BARC layer for patterning low dielectric materials is essential. Here we demonstrate new bottom antireflective coating (BARC) materials for both KrF and ArF lithography. The antireflective layer is composed of a low dielectric constant material SILK and its etching hard mask layer, such as an oxide or nitride film. The SILK is a commercial low dielectric material, which shows good etching and electrical characteristics. We report optical constants of the SILK film in the ultraviolet spectral region.
Keywords :
antireflection coatings; dielectric thin films; optical constants; reflectivity; ultraviolet lithography; ultraviolet spectra; 193 nm; 248 nm; ArF lithography; BARC layer; KrF lithography; bottom antireflective coating materials; etching hard mask layer; low dielectric constant SILK films; optical constants; reflectance; ultraviolet spectral region; Coatings; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric substrates; Etching; Lithography; Optical films; Reflectivity; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984124
