Title :
Ion beam lithography using membrane masks
Author :
Kim, Y.S. ; Hong, W. ; Woo, H.J. ; Choi, H.W. ; Kim, K.D. ; Lee, S.
Author_Institution :
Ion Beam Lab., Korea Inst. of Geoscience & Miner. Resources, Daejeon, South Korea
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
In this paper, we demonstrate both by simulation and experiment that, by using membrane masks, sub-100 nm patterns can be generated with practical mask to wafer distances (∼10 μm). We discuss the straggling problem and membrane mask preparation, and present ion beam lithography results.
Keywords :
ion beam lithography; masks; membranes; semiconductor process modelling; 10 micron; 100 nm; 400 to 450 keV; Si; Si channeling masks; Si/sub 3/N/sub 4/; Si/sub 3/N/sub 4/ channeling masks; TRIM simulation; ion beam lithography; mask to wafer distance; membrane masks; proton beams; simulation; straggling problem; sub-100 nm patterns; Biomembranes; Gold; Ion beams; Laboratories; Lithography; Particle beams; Protons; Resists; Scattering; Silicon;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984133
