• DocumentCode
    2250040
  • Title

    Deposition of thin TiN films by low-power reactive magnetron sputtering

  • Author

    Chuk, P. V Mikhal ; Orlikovsky, A.A. ; Vasiliev, A.G. ; Lebedev, O.I. ; Zakharov, D.N.

  • Author_Institution
    Inst. of Phys. & Technol., Acad. of Sci., Moscow, Russia
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    143
  • Lastpage
    145
  • Abstract
    In this work, we present the study of low-power reactive magnetron sputtering (LPRMS) of TiN films at subcritical nitrogen pressures. Emphasis was given to the structural and electrophysical properties of the layers as candidates for barrier and VLSI interconnection applications.
  • Keywords
    diffusion barriers; integrated circuit interconnections; sputter deposition; titanium compounds; TiN; TiN thin film; VLSI interconnection; barrier layer; electrophysical properties; low-power reactive magnetron sputtering; structural properties; Conductivity; Magnetic materials; Magnetic multilayers; Nitrogen; Physics; Sputtering; Substrates; Temperature measurement; Tin; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621094
  • Filename
    621094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2250040