Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities

Author

Gallo, P. ; Felici, M. ; Dwir, B. ; Atlasov, K. ; Karlsson, K.F. ; Rudra, A. ; Mohan, A. ; Biasiol, G. ; Sorba, L. ; Kapon, E.

Author_Institution

Phys. of Nanostruct. Lab., Ecole Polytech. Fed. de Lausanne, Lausanne

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Deterministic integration of site-controlled InGaAs/GaAs quantum dots (QDs) with photonic crystal cavities is demonstrated. Fine adjustment of QD position (within ~10 nm) and emission energy (few meV) allows construction of coupled QD systems.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; microcavities; photoluminescence; photonic crystals; semiconductor quantum dots; InGaAs-GaAs; QD position adjustment; coupled quantum dot systems; photoluminescence characterization; photon emission energy; photonic crystal membrane microcavities; site-controlled pyramidal semiconductor quantum dots; Atomic force microscopy; Biomembranes; Etching; Finite difference methods; Gallium arsenide; Indium gallium arsenide; Photonic crystals; Quantum dots; Shape; Stimulated emission; (230.5298) Photonic Crystals; (230.5590) Quantum Dot Devices;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572047