EPL proximity and Coulomb effect correction by mask bias method

Author

Kobinata, H. ; Yamada, Y. ; Tamura, T. ; Fujii, K. ; Shinbo, O. ; Nozue, H.

Author_Institution

VLSI Device Dev. Div., NEC Corp., Kanagawa, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

156

Lastpage

157

Abstract

The mask bias method has proved to be a suitable method for EPL proximity effect correction. However, the linewidth reduction ratio due to the backscattering energy changes if the beam blur of the pattern changes. When the beam blur due to the Coulomb interaction effect in the sub-field is not uniform, the value of the mask bias should be modified. In this paper, we discuss the proximity effect correction method, considering the Coulomb interaction distribution in the sub-field.

Keywords

Monte Carlo methods; electron backscattering; electron beam lithography; masks; proximity effect (lithography); semiconductor process modelling; Coulomb effect correction; Coulomb interaction distribution; EPL; Monte-Carlo simulator; backscattering energy; electron-beam projection lithography; linewidth reduction; mask bias method; pattern beam blur; proximity effect correction; Acceleration; Backscatter; Electron optics; Lithography; National electric code; Page description languages; Particle beams; Proximity effect; Research and development; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984137

Filename

984137