• DocumentCode
    2250088
  • Title

    Design and fabrication of photonic crystals in epitaxial free silicon for ultrathin solar cells

  • Author

    Meng, Xianqin ; Depauw, Valerie ; Gomard, Guillaume ; El Daif, Ounsi ; Trompoukis, Christos ; Drouard, Emmanuel ; Fave, Alain ; Dross, Frederic ; Gordon, Ivan ; Seassal, Christian

  • Author_Institution
    Ecole Centrale de Lyon, Univ. de Lyon, Ecully, France
  • fYear
    2011
  • fDate
    13-16 Nov. 2011
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    In this paper, we present the integration of an absorbing photonic crystal within a thin film photovoltaic solar cell. Optical simulations performed on a complete solar cell revealed that patterning the epitaxial crystalline silicon active layer as a 1D and 2D photonic crystal enabled to increase its integrated absorption by 37%abs and 68%abs between 300 nm and 1100 nm, compared to a similar but unpatterned stack. In order to fabricate such promising cells, a specific fabrication processes based on holographic lithography, inductively coupled plasma etching and reactive ion etching has been developed and implemented to obtain ultrathin patterned solar cells.
  • Keywords
    elemental semiconductors; holography; lithography; photonic crystals; silicon; solar cells; sputter etching; 1D photonic crystal; 2D photonic crystal; Si; epitaxial crystalline silicon active layer; epitaxial free silicon; holographic lithography; inductively coupled plasma etching; integrated absorption; optical simulations; reactive ion etching; thin film photovoltaic solar cell; ultrathin patterned solar cells; ultrathin solar cells; unpatterned stack; wavelength 300 nm to 1100 nm; Abstracts; Epitaxial growth; Photonics; Epitaxial crystalline silicon; Holographic lithography; Photonic crystals; Photovoltaics; Thin-film devices and applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
  • Conference_Location
    Shanghai
  • ISSN
    2162-108X
  • Print_ISBN
    978-0-8194-8961-6
  • Type

    conf

  • DOI
    10.1117/12.904383
  • Filename
    6210941