Title :
Room temperature terahertz detection based on electron plasma resonance in an antenna-coupled GaAs MESFET
Author :
Kim, Sangwoo ; Sherwin, Mark S. ; Zimmerman, Jeramy D. ; Gossard, Arthur C. ; Focardi, Paolo ; Wu, Dong Ho
Author_Institution :
Phys. Dept., Univ. of California, Santa Barbara, CA
Abstract :
Plasma resonance of electrons was observed in an antenna-coupled GaAs metal-semiconductor-field-effect-transistor (MESFET) by sweeping bias voltages. This resonant absorption was used to realize a room temperature terahertz detector.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; submillimetre wave detectors; GaAs; antenna-coupled GaAs MESFET; electron plasma resonance; metal-semiconductor-field-effect-transistor; resonant absorption; sweeping bias voltage; temperature 293 K to 298 K; terahertz detection; Electrons; Frequency; Gallium arsenide; Infrared detectors; MESFETs; Plasma density; Plasma materials processing; Plasma temperature; Resonance; Voltage; (040.2235) Far infrared or terahertz; (120.1880) Detection;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
