DocumentCode
2250168
Title
Room temperature terahertz detection based on electron plasma resonance in an antenna-coupled GaAs MESFET
Author
Kim, Sangwoo ; Sherwin, Mark S. ; Zimmerman, Jeramy D. ; Gossard, Arthur C. ; Focardi, Paolo ; Wu, Dong Ho
Author_Institution
Phys. Dept., Univ. of California, Santa Barbara, CA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Plasma resonance of electrons was observed in an antenna-coupled GaAs metal-semiconductor-field-effect-transistor (MESFET) by sweeping bias voltages. This resonant absorption was used to realize a room temperature terahertz detector.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; submillimetre wave detectors; GaAs; antenna-coupled GaAs MESFET; electron plasma resonance; metal-semiconductor-field-effect-transistor; resonant absorption; sweeping bias voltage; temperature 293 K to 298 K; terahertz detection; Electrons; Frequency; Gallium arsenide; Infrared detectors; MESFETs; Plasma density; Plasma materials processing; Plasma temperature; Resonance; Voltage; (040.2235) Far infrared or terahertz; (120.1880) Detection;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572051
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