DocumentCode
2250188
Title
Observation of enhanced THz emission from InGaN/GaN multiple quantum wells
Author
Mu, Xiaodong ; Ding, Yujie J. ; Arif, Ronald A. ; Jamil, Muhammad ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Broadband THz pulses have been generated from InGaN/GaN multiple quantum wells pumped by a frequency-doubled sub-picosecond laser amplifier at 395 nm. Enhanced THz emissions are strongly correlated with reduced photoluminescence intensities.
Keywords
III-V semiconductors; gallium compounds; indium compounds; optical fibre amplifiers; optical harmonic generation; optical pulse generation; optical pumping; wide band gap semiconductors; InGaN-GaN; broadband THz pulses; enhanced THz emission; frequency-doubled sub-picosecond laser amplifier; multiple quantum wells; photoluminescence intensities; wavelength 395 nm; Frequency measurement; Gallium nitride; Laser excitation; Optical pulse generation; Power generation; Pulse amplifiers; Pump lasers; Quantum computing; Quantum well devices; Wavelength measurement; (190.2620) Harmonic generation and mixing; (320.7110) Ultrafast nonlinear optics;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572052
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