DocumentCode
2250209
Title
Direct patterning on low dielectric constant materials with electron beam lithography
Author
Ben-Chang Chen ; Yee-Kai Lai ; Fu-Hsiang Ko ; Cheng-Tung Chou ; Hsuen-Li Chen
Author_Institution
Nat. Nano Device Labs., Hsinchu, Taiwan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
168
Lastpage
169
Abstract
Electron beam (EB) lithography and direct patterning of low-dielectric-constant (low-k) materials are two crucial issues of nanofabrication technologies. In this paper, we propose direct patterning of negative tone hydrogen silsesquioxane (HSQ) film of which can replace the use of resist processes including resist coating and stripping.
Keywords
dielectric thin films; electron beam lithography; nanotechnology; organic compounds; direct patterning; electron beam lithography; electron sensitive low-k material; hydrogen silsesquioxane film; low-dielectric-constant materials; nanofabrication; negative tone HSQ film; Chemical engineering; Dielectric constant; Dielectric materials; Electron beams; Laboratories; Lithography; Nanoscale devices; Resists; Single electron transistors; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984143
Filename
984143
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