• DocumentCode
    2250232
  • Title

    Ultra fast, high-power laser-activated switches

  • Author

    Davis, J.R. ; Roberts, J.S.

  • Author_Institution
    Westinghouse Res. Labs., Pittsburgh, PA, USA
  • fYear
    1976
  • fDate
    8-10 June 1976
  • Firstpage
    272
  • Lastpage
    279
  • Abstract
    Laser fired semiconductor switches have been operated reliably at multi-megawatt power levels with nanosecond rise-times. Pulse currents up to 10,000 amperes and durations from 50 nanoseconds to 40 microseconds were obtained from storage lines charged as high as 1300 volts. In this paper data obtained from several experiments are compared to calculated results from a theoretical computer model. The analysis, reported previously (1), has been extended to include the effects of the initial carrier dynamics during turn-on.
  • Keywords
    photoconducting switches; high-power laser-activated switches; laser fired semiconductor switches; ultrafast laser-activated switches; Current density; Finite element analysis; Heating; Plasmas; Transmission line measurements; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1976 IEEE
  • Conference_Location
    Cleveland, OH
  • Type

    conf

  • DOI
    10.1109/PESC.1976.7072928
  • Filename
    7072928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2250232