DocumentCode :
2250232
Title :
Ultra fast, high-power laser-activated switches
Author :
Davis, J.R. ; Roberts, J.S.
Author_Institution :
Westinghouse Res. Labs., Pittsburgh, PA, USA
fYear :
1976
fDate :
8-10 June 1976
Firstpage :
272
Lastpage :
279
Abstract :
Laser fired semiconductor switches have been operated reliably at multi-megawatt power levels with nanosecond rise-times. Pulse currents up to 10,000 amperes and durations from 50 nanoseconds to 40 microseconds were obtained from storage lines charged as high as 1300 volts. In this paper data obtained from several experiments are compared to calculated results from a theoretical computer model. The analysis, reported previously (1), has been extended to include the effects of the initial carrier dynamics during turn-on.
Keywords :
photoconducting switches; high-power laser-activated switches; laser fired semiconductor switches; ultrafast laser-activated switches; Current density; Finite element analysis; Heating; Plasmas; Transmission line measurements; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1976 IEEE
Conference_Location :
Cleveland, OH
Type :
conf
DOI :
10.1109/PESC.1976.7072928
Filename :
7072928
Link To Document :
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