Title :
Terahertz emission from nonpolar gallium nitride
Author :
Metcalfe, Grace D. ; Readinger, Eric D. ; Shen, Hongen ; Wraback, Michael ; Hirai, Asako ; Young, Erin ; Speck, And James S
Author_Institution :
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD
Abstract :
We observe polarized terahertz emission from nonpolar gallium nitride due to an in-plane polarization terminated by stacking faults. A measured flip of the THz waveform polarity agrees with carrier transport in an in-plane electric field.
Keywords :
III-V semiconductors; gallium compounds; light polarisation; stacking faults; wide band gap semiconductors; GaN; THz waveform polarity; carrier transport; in-plane electric field; in-plane polarization; nonpolar gallium nitride; polarized terahertz emission; stacking faults; Gallium nitride; III-V semiconductor materials; Optical materials; Optical polarization; Optical sensors; Piezoelectric polarization; Semiconductor materials; Stacking; Stimulated emission; Substrates; (160.6000) Semiconductor materials; (320.7120) Ultrafast phenomena;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
