DocumentCode
2250233
Title
Terahertz emission from nonpolar gallium nitride
Author
Metcalfe, Grace D. ; Readinger, Eric D. ; Shen, Hongen ; Wraback, Michael ; Hirai, Asako ; Young, Erin ; Speck, And James S
Author_Institution
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We observe polarized terahertz emission from nonpolar gallium nitride due to an in-plane polarization terminated by stacking faults. A measured flip of the THz waveform polarity agrees with carrier transport in an in-plane electric field.
Keywords
III-V semiconductors; gallium compounds; light polarisation; stacking faults; wide band gap semiconductors; GaN; THz waveform polarity; carrier transport; in-plane electric field; in-plane polarization; nonpolar gallium nitride; polarized terahertz emission; stacking faults; Gallium nitride; III-V semiconductor materials; Optical materials; Optical polarization; Optical sensors; Piezoelectric polarization; Semiconductor materials; Stacking; Stimulated emission; Substrates; (160.6000) Semiconductor materials; (320.7120) Ultrafast phenomena;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572053
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