Title :
Influence of substrate roughness on the formation of self-assembled monolayers (SAM) on Silicon [100]
Author :
Moré, S. ; Graaf, H. ; Nonogaki, Y. ; Urisu, T.
Author_Institution :
Inst. for Molecular Sci., Aichi, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
We have investigated the relationship between surface roughness and morphology and the formation of self-assembled monolayers (SAM). Rough surfaces were prepared by abrading polished Si[100] wafers with SiC paper. Dodecan (-C/sub 12/H/sub 25/) SAM were prepared by refluxing the samples in a 30% dodecene solution in mesithylene. The FTIR spectra of these samples were analyzed with respect to the CH/sub 2/- and CH/sub 3/- peak positions, peak intensities and peak widths.
Keywords :
Fourier transform spectra; elemental semiconductors; infrared spectra; monolayers; organic compounds; rough surfaces; self-assembly; silicon; FTIR spectra; Si; Si[100] surface; dodecan; self-assembled monolayer; substrate roughness; surface morphology; Chemicals; Dielectrics and electrical insulation; MONOS devices; Nanoscale devices; Rough surfaces; Silicon; Surface emitting lasers; Surface morphology; Surface roughness; Surface waves;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984148
