Chemical beam epitaxy of CoGa on GaAs using GaEt3 and CpCo(CO)2 as dual organometallic sources

We have investigated for the first time the epitaxial growth of CoGa thin films on (100)GaAs using the separate sources CpCo(CO)/sub 2/ and GaEt/sub 3/ by chemical beam epitaxy (CBE), also called metalorganic molecular beam epitaxy (MOMBE). The gallium source GaEt/sub 3/ was preferred to GaMe/sub 3/ because it is known to be thermally less stable and it induces less carbon contamination in the films grown under reduce pressure. The compound CpCo(CO)/sub 2/ was selected because it is a volatile liquid which has a decomposition temperature range compatible with GaEt/sub 3/.