Title :
The change of electrical properties of the aluminum-porous silicon contact by thermal annealing
Author :
Zimin, S.P. ; Komarov, E.P.
Author_Institution :
Yaroslavl State Univ., Russia
Abstract :
The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.
Keywords :
aluminium; annealing; elemental semiconductors; ohmic contacts; porous materials; semiconductor-metal boundaries; silicon; 300 to 500 C; Al-Si; aluminum-porous silicon ohmic contact; electrical properties; thermal annealing; Annealing; Charge carriers; Contacts; Etching; Hydrogen; Impurities; Inorganic materials; Passivation; Plasma temperature; Silicon;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621101
