DocumentCode
2250404
Title
Advances in the formation of C54-TiSi2 with an interposed refractory metal layer: some properties
Author
Mouroux, A. ; Kaplan, W. ; Zhang, Shi-Li ; Peterson, S.
Author_Institution
KTH-Electron. Solid State Electron., Kista, Sweden
fYear
1997
fDate
16-19 March 1997
Firstpage
164
Lastpage
165
Abstract
The influence of the interposed refractory metal layer on the properties of the TiSi/sub 2/ formed is studied. The substrates used were either polycrystalline or monocrystalline Si. Three different metal depositions were done, one with only 60 nm Ti, the two others with 60 nm Ti on top of a 0.5 nm thick Mo or Ta layer. A rapid thermal anneal in N/sub 2/ was carried out for the silicide formation. Very smooth TiSi/sub 2/ films with sharp TiSi/sub 2//Si interface were obtained with the interposed layer.
Keywords
chemical interdiffusion; metallic thin films; rapid thermal annealing; titanium compounds; C54-TiSi/sub 2/ film; TiSi/sub 2/-Mo-Si; TiSi/sub 2/-Ta-Si; interposed refractory metal layer; metal deposition; monocrystalline Si substrate; polycrystalline Si substrate; rapid thermal annealing; silicide formation; Atomic force microscopy; Conductivity; Electric breakdown; Rapid thermal annealing; Silicides; Solid state circuits; Temperature dependence; Thermal force; Thermal resistance; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621104
Filename
621104
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