DocumentCode
2250454
Title
Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power
Author
Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Donetsky, D. ; Belenky, G.
Author_Institution
State Univ. of New York at Stony Brook, Stony Brook, NY
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; semiconductor quantum wells; InAlGaAsSb; continuous wave output power; continuous-wave regime; high-power diode lasers; power 80 mW; type-I diode lasers; type-I quantum-well; wavelength 3.1 mum; Carrier confinement; Chemical lasers; Diode lasers; Gas lasers; Optical design; Power generation; Power lasers; Quantum cascade lasers; Semiconductor lasers; Temperature sensors; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572062
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