Title :
Electrically pumped GaSb-based VCSEL with buried tunnel junction
Author :
Bachmann, A. ; Lim, T. ; Kashani-Shirazi, K. ; Dier, O. ; Lauer, C. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching
Abstract :
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mum.
Keywords :
III-V semiconductors; gallium compounds; surface emitting lasers; GaSb; buried tunnel junction; electrically pumped VCSEL; laser emission; vertical cavity surface emitting laser; wavelength 2.3 mum; Distributed Bragg reflectors; Gas lasers; Optical pumping; Power generation; Pump lasers; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; (140.5960) Semiconductor lasers; (140.7260) VCSEL; (250.7260) VCSEL; (300.6360) Spectroscopy, laser;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
