Title :
Subwavelength antireflection gratings for light emitting diodes and photodiodes fabricated by fast atom beam etching
Author :
Ishimori, M. ; Kanamori, Y. ; Sasaki, M. ; Hane, K.
Author_Institution :
Dept. of Mechatronics & Precision Eng., Tohoku Univ., Sendai, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
In this study, we fabricated a two-dimensional subwavelength-structure (SWS) surface on GaAlAs wafer. The SWS surface consists of 200 nm period tapered grating. In the fabrication, electron-beam (EB) lithography and fast atom beam (FAB) etching with the process gases of SF/sub 6/ and Cl/sub 2/ were used. We demonstrated that the SWS surfaces worked well for enhancing the emission from GaAlAs light emitting diode (LED) and for suppressing the reflection from GaAlAs photodiode.
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; diffraction gratings; electron beam lithography; gallium arsenide; light emitting diodes; optical fabrication; photodiodes; sputter etching; 200 nm; GaAlAs; GaAlAs wafer; electron beam lithography; fabrication; fast atom beam etching; light emitting diode; photodiode; subwavelength antireflection grating; two-dimensional subwavelength structure surface; Atomic beams; Etching; Fabrication; Gratings; Light emitting diodes; Optical surface waves; Photodiodes; Reflectivity; Resists; Surface waves;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984158
