Title :
A New Approach of Hot-Carrier Degradation and Lifetime Prediction for N-MOS Transistors
Author :
Kaçar, Firat ; Kuntman, Ayten ; Kuntman, Hakan
Author_Institution :
Dept. of Electr.-Electron. Eng., Istanbul Univ.
Abstract :
In this paper the degradation in the drain current and threshold voltage of the N-MOS transistors are observed by operating the device under stress voltage conditions. Using the observation results the effect of hot-carriers was investigated statistically and a new statistical method for modeling was proposed to be an alternative to those given in the literature. The observed and the estimated values of the degradation are compared
Keywords :
MOSFET; statistical analysis; N-MOS transistors; drain current; hot-carrier degradation; lifetime prediction; statistical method; stress voltage conditions; threshold voltage; CMOS technology; Degradation; Hot carrier effects; Hot carriers; MOSFET circuits; Power dissipation; Semiconductor device modeling; Statistical analysis; Stress; Threshold voltage;
Conference_Titel :
Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
Conference_Location :
Malaga
Print_ISBN :
1-4244-0087-2
DOI :
10.1109/MELCON.2006.1653053
