DocumentCode :
2250752
Title :
Comparison of Pt etching characteristics with SF/sub 6/ and Cl/sub 2/ plasma chemistries
Author :
Sang Hoon Kim ; Sup-Youl Ju ; Jinho Ahn
Author_Institution :
Div. of Mater. Sci. & Eng., Hanyang Univ., Seoul, South Korea
fYear :
2001
fDate :
Oct. 31 2001-Nov. 2 2001
Firstpage :
212
Lastpage :
213
Abstract :
Ferroelectric thin films have been studied for applications in random access memory (RAM). Owing to the decreasing feature size and increasing density of integrated circuit devices, the requirements for patterning techniques suitable for the fine features of bottom electrodes have been increased. Platinum (Pt) has been the most widely used electrode material for ferroelectric capacitors due to its good thermal stability and low resistivity. Several studies have been reported on the etching of Pt thin films using CF/Ar chlorine-based chemistry and H/sub 2/S/HBr gases. In this study, we have used SF/sub 6/ gas chemistry in the etching of Pt thin film and compared this with the etching characteristics with Cl/sub 2/ gas chemistry.
Keywords :
chlorine; ferroelectric capacitors; ferroelectric storage; integrated circuit metallisation; metallic thin films; platinum; sputter etching; sulphur compounds; Cl/sub 2/; Cl/sub 2/ plasma chemistry; FeRAM; Pt; Pt electrode material; Pt etching characteristics; Pt thin films; SF/sub 6/; SF/sub 6/ plasma chemistry; ferroelectric RAM; ferroelectric capacitors; patterning techniques; random access memory; thermal stability; Capacitors; Chemistry; Electrodes; Etching; Ferroelectric materials; Platinum; Random access memory; Read-write memory; Thermal resistance; Thin film circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
Type :
conf
DOI :
10.1109/IMNC.2001.984165
Filename :
984165
Link To Document :
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