Title :
Epitaxial GaAs MESFETs for high linearity, high efficiency wireless applications
Author :
Schirmann, E. ; Baeten, R. ; Costa, J. ; Green, D.L. ; Halchin, D. ; Martinez, M.J. ; Reyes, A.
Author_Institution :
Commun. Products Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
Epitaxial GaAs MESFETs with exceptionally low distortion and simultaneously high efficiency have been manufactured for use in linear power amplifier modules. When tuned for linearity, 15 mm devices exhibit Psat>34.5 dBm and PAE>68% at Vds=5.8 V and 835 MHz (single tone). With two tone average Pout=30 dBm, these devices exhibit PAE>48%, IM/sub 3/<-35 dBc, and IM/sub 5/<-45 dBc.
Keywords :
III-V semiconductors; UHF power amplifiers; cellular radio; digital radio; epitaxial growth; gallium arsenide; modules; power amplifiers; 5.8 V; 835 MHz; GaAs; III-V semiconductors; cellular radio; digital radio; epitaxial MESFET; high efficiency wireless applications; high linearity wireless applications; linear power amplifier modules; low distortion; Dielectrics; Etching; Fabrication; Fixtures; Gallium arsenide; Linearity; MESFETs; Packaging; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Wireless Applications Digest, 1997., IEEE MTT-S Symposium on Technologies for
Conference_Location :
Vancouver, BC, Canada
Print_ISBN :
0-7803-3318-7
DOI :
10.1109/MTTTWA.1997.595105
