Title :
Characterization of the electronic mobility dependence on frequency and bias in AsGa devices
Author :
Chaibi, M. ; Fernández, T. ; Rafael, G. ; Garcia, J.A. ; Mediavilla, A. ; Aghoutane, M.
Author_Institution :
Dept. of Commun. Eng., Cantabria Univ., Santander
Abstract :
In this paper, a novel technique to study the evolution of the electronic mobility in GaAs microwave MESFET´s devices versus both, frequency and bias condition is presented. The technique employs scattering parameters measurement over the frequency band of interest along with DC and pulsed transconductance and output conductance device measurements. The examination of the presented results shows the need to include the variation of mobility with DC bias and frequency in device nonlinear models
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric admittance; electron mobility; gallium arsenide; microwave devices; AsGa devices; DC bias; DC transconductance; GaAs; GaAs microwave MESFET devices; bias condition; device nonlinear models; electronic mobility dependence characterization; frequency band; output conductance device measurements; pulsed transconductance; scattering parameters measurement; Capacitance; Electron mobility; Frequency measurement; Gallium arsenide; Intrusion detection; MESFETs; Microwave devices; Pulse measurements; Scattering parameters; Transconductance;
Conference_Titel :
Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
Conference_Location :
Malaga
Print_ISBN :
1-4244-0087-2
DOI :
10.1109/MELCON.2006.1653062
