Title :
SiOx Coverage Mesa-typed InGaAs/InP P-I-N Photodetector
Author :
Tang, Shiang-Feng ; Liao, Xue-Liang ; Tsai, Hong-Mau ; Hao-Lai, Jian ; Chen, Tzu-Chiang ; Chuang, Hsiu Hsiu ; Yang, San-Te ; Chiang, Cheng-Der
Author_Institution :
Mater. & Electro-Opt. Res. Div., Chung-Shan Inst. of Sci. & Technol., Taoyuan
Abstract :
The InGaAs/InP P-I-N photodiodes are grown by a metal-organic chemical vapor deposition (MOCVD) with micro-effusion tubes of hydride carrier and reaction gases. Removing top InGaAs and using SiOx coverage on the photon absorbed area leads to enhance responsivity (~3 AAV) and quantum efficiency (>85%). And using Zn diffused to top ring InGaAs results in good ohmic contact region.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; ohmic contacts; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP P-I-N photodiodes; SiOx; metal-organic chemical vapor deposition; microeffusion tubes; ohmic contact; Chemical technology; Doping profiles; Indium gallium arsenide; Indium phosphide; MOCVD; Materials science and technology; PIN photodiodes; Photodetectors; Temperature; Zinc;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391688
