Implantation of N-ion on sapphire substrate for GaN epilayer

Author

Young Ju Park ; Yong Suk Cho ; Eui Kwan Koh ; Eun Kyu Kim ; Gyeungho Kim ; Dongjin Byun ; Suk-Ki Min

Author_Institution

Semicond. Mater. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

222

Lastpage

223

Abstract

The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N/sup +/-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N/sup +/-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.

Keywords

III-V semiconductors; MOCVD; gallium compounds; ion implantation; lattice constants; sapphire; semiconductor epitaxial layers; semiconductor growth; thermal expansion; vapour phase epitaxial growth; wide band gap semiconductors; GaN epilayer growth; GaN-Al/sub 2/O/sub 3/:N; MOCVD; N/sup +/-implantation treatment; lattice constants; metal organic chemical vapor deposition; sapphire substrate; stress fields; thermal expansion coefficients; Buffer layers; Gallium nitride; MOCVD; Nitrogen; Rough surfaces; Semiconductor materials; Substrates; Surface roughness; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984170

Filename

984170