Title :
A Darlington SiGe microwave monolithic integrated circuit
Author :
Lu, Yashi ; Zhang, Wei ; Liu, Zhihong ; Li, Gaoqing ; Liu, Aihua
Author_Institution :
Inst. of Microelectronics, Tsinghua Univ., Beijing
Abstract :
This paper presents a low noise Darlington SiGe microwave monolithic integrated circuit (MMIC). The circuit consisting of two SiGe hetero-junction bipolar transistors and four resistors is convenient to cascade without any other matching circuit. It is fabricated in a quasi-self-aligned process, with a nonselectively grown epitaxial SiGe base. The small resistor R4 is critical to smooth the gain band, lower the input and output voltage-static-wave ratio (VSWR) in a broad band, so it is made differently from the other three. The measurement results give the cutoff frequencies of SiGe HBTs 10.9 GHz and 9.2 GHz respectively. At 1 GHz, the noise figure of the circuit is 1.59 dB, the power gain is 16.1 dB, the input and output VSWR is 1.6 and 2.0
Keywords :
Ge-Si alloys; bipolar MMIC; 1 GHz; 1.59 dB; 10.9 GHz; 16.1 dB; 9.2 GHz; MMIC; SiGe; darlington SiGe microwave monolithic integrated; hetero-junction bipolar transistors; quasi-self-aligned process; resistors; voltage-static-wave ratio; Bipolar transistors; Cutoff frequency; Frequency measurement; Germanium silicon alloys; Integrated circuit noise; MMICs; Monolithic integrated circuits; Resistors; Silicon germanium; Voltage;
Conference_Titel :
Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
Conference_Location :
Malaga
Print_ISBN :
1-4244-0087-2
DOI :
10.1109/MELCON.2006.1653067
