Title :
Ultrafast carrier dynamics in semiconductor nanowires
Author :
Prasankumar, R.P. ; Choi, S.G. ; Wang, G.T. ; Picraux, S.T. ; Taylor, A.J.
Author_Institution :
Center for Integrated Nanotechnol., Los Alamos Nat. Lab., Los Alamos, NM
Abstract :
Ultrafast wavelength-tunable optical measurements on semiconductor nanowires allow us to independently probe the dynamics of electrons, holes, and defect states. These investigations reveal the influence of two-dimensional confinement on carrier dynamics in these nanosystems.
Keywords :
III-V semiconductors; annealing; carrier relaxation time; defect states; gallium compounds; high-speed optical techniques; nanowires; semiconductor quantum wires; time resolved spectra; wide band gap semiconductors; GaN; annealing; carrier relaxation; defect states; electron dynamics; hole dynamics; semiconductor nanowires; time-resolved measurements; two-dimensional confinement; ultrafast carrier dynamics; ultrafast optical spectroscopy; ultrafast wavelength-tunable optical measurements; Annealing; Gallium nitride; Luminescence; Nanowires; Optical pumping; Probes; Spontaneous emission; Substrates; Ultrafast optics; Wavelength measurement; (320.7120) Ultrafast phenomena; (320.7130) Ultrafast processes in condensed matter;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
