Detection of process-dependent changes in the Hf(in1−x)SixO2/Si (100) barrier heights by second harmonic generation

Author

Price, J. ; An, Y.Q. ; Downer, M.C.

Author_Institution

Dept. of Phys., Univ. of Texas at Austin, Austin, TX

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We measure barrier heights of silicon/high-k dielectric structures, and their changes with processing, by identifying a photon-energy-dependent threshold for internal hole photoemission using spectroscopic time-dependent second-harmonic generation.

Keywords

elemental semiconductors; hafnium compounds; high-k dielectric thin films; optical harmonic generation; photoemission; silicon; Hf_(1-x)Si_xO₂-Si; hafnium-based gate dielectrics; high-k barrier height determination; higher energy barrier offsets; internal hole photoemission; photon-energy-dependent threshold; process-dependent change detection; silicon/high-k dielectric structures; spectroscopic TD-SHG; spectroscopic time-dependent second-harmonic generation; Charge carrier processes; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Optical harmonic generation; Photoelectricity; Photonic band gap; Silicon; Spectroscopy; (160.6000) semiconductors; (240.4350) Nonlinear optics at surfaces;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572086