Title :
Thickness measurements of ultra-thin films using AFM
Author :
Tae Hun Kim ; Hyuck In Kwon ; Jong Duk Lee ; Byung-Gook Park
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Proposes a new method that can measure the thickness of thin films regardless of the kinds of samples using AFM (atomic force microscopy). The characteristics of AFM lead to the ability to measure the thickness of thin films regardless of the kinds and conductivity of the samples. To verify the usefulness of this method, the thickness of SiO/sub 2/ grown on Si was determined. We compared the thickness value determined using this method with TEM (transmission electron microscopy) data. We obtained reasonable thickness data between 20 and 40 /spl Aring/ compared with TEM data. In addition, using our method, we studied the influence of chemical oxide generated during H/sub 2/SO/sub 4/ PR strip on determining the thickness of the SiO/sub 2/ films.
Keywords :
atomic force microscopy; integrated circuit measurement; nanotechnology; thickness measurement; 20 to 40 angstrom; AFM; PR strip; SiO/sub 2/-Si; chemical oxide; gate oxide; nanometer range; semiconductor process technology; thickness measurements; ultra-thin films; Atomic force microscopy; Atomic measurements; Conductivity; Ellipsometry; Force measurement; Refractive index; Silicon; Thickness measurement; Transistors; Transmission electron microscopy;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984179
